Product comparison · 2 internal solid state drives

Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G vs Integral 120 GB V Series SATA III

25specifications compared
20differ
5identical
9known for one product only

Key differences

The Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G has 6,940 MB/s more read speed than the Integral 120 GB V Series SATA III (7400 MB/s vs 460 MB/s). The Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G has 6,000 MB/s more write speed than the Integral 120 GB V Series SATA III (6300 MB/s vs 300 MB/s). The Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G has 3.99 W more power consumption (read) than the Integral 120 GB V Series SATA III (5 W vs 1.01 W). Only the Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G has NVMe. SSD capacity: 1 TB on the Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G, 120 GB on the Integral 120 GB V Series SATA III.

SSD capacity
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:1 TB
- 120 GB V Series SATA III:120 GB
SSD form factor
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:M.2
- 120 GB V Series SATA III:2.5"
Interface
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:PCI Express 4.0
- 120 GB V Series SATA III:Serial ATA III
NVMe
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:Yes
- 120 GB V Series SATA III:No
Component for
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:PC/Notebook/Game console
- 120 GB V Series SATA III:PC/Laptop
Read speed
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:7400 MB/s
- 120 GB V Series SATA III:460 MB/s
Write speed
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:6300 MB/s
- 120 GB V Series SATA III:300 MB/s
Certification
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:CE, UKCA, FCC
- 120 GB V Series SATA III:CE, FCC, UKCA

Side by side

Differences highlightedShow differences only

Comparison of MZ-V9P1T0BW-IN, T253X1120G0C101-IN
34 specifications	A Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G Model MZ-V9P1T0BW-IN View product	B Integral 120 GB V Series SATA III Model T253X1120G0C101-IN View product
Features8 differ
SSD capacityDiffers	1 TB	120 GB
SSD form factorDiffers	M.2	2.5"
InterfaceDiffers	PCI Express 4.0	Serial ATA III
NVMeDiffers	Yes	No
Component forDiffers	PC/Notebook/Game console	PC/Laptop
Hardware encryption	No	No
Read speedDiffers	7400 MB/s	460 MB/s
Write speedDiffers	6300 MB/s	300 MB/s
Random read (4KB)Known for one	670000 IOPS	Unknown — not stated by the source
Random write (4KB)Known for one	980000 IOPS	Unknown — not stated by the source
Controller typeKnown for one	Maxio MAP1602	Unknown — not stated by the source
S.M.A.R.T. support	Yes	Yes
Protection features	Shock resistant	Shock resistant
TBW ratingKnown for one	1200	Unknown — not stated by the source
CertificationDiffers	CE, UKCA, FCC	CE, FCC, UKCA
Memory typeKnown for one	Unknown — not stated by the source	TLC
Data transfer rateKnown for one	Unknown — not stated by the source	6 Gbit/s
TRIM supportKnown for one	Unknown — not stated by the source	Yes
Mean time between failures (MTBF)Known for one	Unknown — not stated by the source	1500000 h
Power2 differ
Operating voltageKnown for one	3.3 V	Unknown — not stated by the source
Power consumption (read)Differs	5 W	1.01 W
Power consumption (write)Differs	5 W	1.055 W
Weight & dimensions4 differ
WidthDiffers	22 mm	69.8 mm
DepthDiffers	2.8 mm	100.2 mm
HeightDiffers	80 mm	7 mm
WeightDiffers	9 g	45 g
Packaging data4 differ
Package widthDiffers	97 mm	107 mm
Package depthDiffers	16.5 mm	13 mm
Package heightDiffers	123 mm	133 mm
Package weightDiffers	15 g	64 g
Operational conditions1 differ
Operating temperature (T-T)	0 - 70 °C	0 - 70 °C
Storage temperature (T-T)	-40 - 85 °C	-40 - 85 °C
Operating relative humidity (H-H)Differs	5 - 95%	5 - 85%
Other features1 differ
Compliance certificatesDiffers	RoHS, REACH	RoHS

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

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