Product comparison · 2 internal solid state drives

Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G vs Integral SLEG-860-500GCS -IN

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  • 30specifications compared
  • 19differ
  • 11identical
  • 3known for one product only

Key differences

  • SSD capacity
    • 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:1 TB
    • SLEG-860-500GCS -IN:500 GB
  • Component for
    • 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:PC/Notebook/Game console
    • SLEG-860-500GCS -IN:PC
  • Read speed
    • 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:7400 MB/s
    • SLEG-860-500GCS -IN:5000 MB/s
  • Write speed
    • 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:6300 MB/s
    • SLEG-860-500GCS -IN:2600 MB/s
  • Random read (4KB)
    • 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:670000 IOPS
    • SLEG-860-500GCS -IN:360000 IOPS
  • Random write (4KB)
    • 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:980000 IOPS
    • SLEG-860-500GCS -IN:520000 IOPS
  • Controller type
    • 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:Maxio MAP1602
    • SLEG-860-500GCS -IN:MAS
  • TBW rating
    • 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:1200
    • SLEG-860-500GCS -IN:1024

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Comparison of MZ-V9P1T0BW-IN, SLEG-860-500GCS -IN
33 specifications
Features9 differ
SSD capacityDiffers1 TB500 GB
SSD form factorM.2M.2
InterfacePCI Express 4.0PCI Express 4.0
NVMeYesYes
Memory typeKnown for oneUnknown — not stated by the sourceTLC
Component forDiffersPC/Notebook/Game consolePC
Hardware encryptionNoNo
Read speedDiffers7400 MB/s5000 MB/s
Write speedDiffers6300 MB/s2600 MB/s
Random read (4KB)Differs670000 IOPS360000 IOPS
Random write (4KB)Differs980000 IOPS520000 IOPS
Controller typeDiffersMaxio MAP1602MAS
S.M.A.R.T. supportYesYes
TRIM supportKnown for oneUnknown — not stated by the sourceYes
Mean time between failures (MTBF)Known for oneUnknown — not stated by the source1500000 h
Protection featuresShock resistantShock resistant
TBW ratingDiffers12001024
CertificationDiffersCE, UKCA, FCCCE, UKCA, FCC, RoHs
Power2 differ
Operating voltage3.3 V3.3 V
Power consumption (read)Differs5 W3.4 W
Power consumption (write)Differs5 W3.1 W
Weight & dimensions3 differ
Width22 mm22 mm
DepthDiffers2.8 mm80 mm
HeightDiffers80 mm0.8 mm
WeightDiffers9 g6.4 g
Packaging data4 differ
Package widthDiffers97 mm55 mm
Package depthDiffers16.5 mm10 mm
Package heightDiffers123 mm155 mm
Package weightDiffers15 g37.8 g
Operational conditionsidentical
Operating temperature (T-T)0 - 70 °C0 - 70 °C
Storage temperature (T-T)-40 - 85 °C-40 - 85 °C
Operating relative humidity (H-H)5 - 95%5 - 95%
Other features1 differ
Compliance certificatesDiffersRoHS, REACHRoHS

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

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