Product comparison · 2 internal solid state drives

Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G vs Integral 1TB EDGE 2 GEN5 M.2 2280 NVME SOLID STATE DRIVE WITHOUT HEATSINK for KINGSTON SFYR2S/1T0 and INSSD1TM2280G5EDGE2X

29specifications compared
19differ
10identical
3known for one product only

Key differences

The Integral 1TB EDGE 2 GEN5 M.2 2280 NVME SOLID STATE DRIVE WITHOUT HEATSINK for KINGSTON SFYR2S/1T0 and INSSD1TM2280G5EDGE2X has 7,600 MB/s more read speed than the Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G (15000 MB/s vs 7400 MB/s). The Integral 1TB EDGE 2 GEN5 M.2 2280 NVME SOLID STATE DRIVE WITHOUT HEATSINK for KINGSTON SFYR2S/1T0 and INSSD1TM2280G5EDGE2X has 7,200 MB/s more write speed than the Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G (13500 MB/s vs 6300 MB/s). The Integral 1TB EDGE 2 GEN5 M.2 2280 NVME SOLID STATE DRIVE WITHOUT HEATSINK for KINGSTON SFYR2S/1T0 and INSSD1TM2280G5EDGE2X has 630,000 IOPS more random read (4KB) than the Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G (1300000 IOPS vs 670000 IOPS). Interface: PCI Express 4.0 on the Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G, PCI Express 5.0 on the Integral 1TB EDGE 2 GEN5 M.2 2280 NVME SOLID STATE DRIVE WITHOUT HEATSINK for KINGSTON SFYR2S/1T0 and INSSD1TM2280G5EDGE2X. Component for: PC/Notebook/Game console on the Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G, PC/Laptop on the Integral 1TB EDGE 2 GEN5 M.2 2280 NVME SOLID STATE DRIVE WITHOUT HEATSINK for KINGSTON SFYR2S/1T0 and INSSD1TM2280G5EDGE2X.

Interface
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:PCI Express 4.0
- 1TB EDGE 2 GEN5 M.2 2280 NVME SOLID STATE DRIVE WITHOUT HEATSINK for KINGSTON SFYR2S/1T0 and INSSD1TM2280G5EDGE2X:PCI Express 5.0
Component for
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:PC/Notebook/Game console
- 1TB EDGE 2 GEN5 M.2 2280 NVME SOLID STATE DRIVE WITHOUT HEATSINK for KINGSTON SFYR2S/1T0 and INSSD1TM2280G5EDGE2X:PC/Laptop
Read speed
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:7400 MB/s
- 1TB EDGE 2 GEN5 M.2 2280 NVME SOLID STATE DRIVE WITHOUT HEATSINK for KINGSTON SFYR2S/1T0 and INSSD1TM2280G5EDGE2X:15000 MB/s
Write speed
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:6300 MB/s
- 1TB EDGE 2 GEN5 M.2 2280 NVME SOLID STATE DRIVE WITHOUT HEATSINK for KINGSTON SFYR2S/1T0 and INSSD1TM2280G5EDGE2X:13500 MB/s
Random read (4KB)
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:670000 IOPS
- 1TB EDGE 2 GEN5 M.2 2280 NVME SOLID STATE DRIVE WITHOUT HEATSINK for KINGSTON SFYR2S/1T0 and INSSD1TM2280G5EDGE2X:1300000 IOPS
Random write (4KB)
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:980000 IOPS
- 1TB EDGE 2 GEN5 M.2 2280 NVME SOLID STATE DRIVE WITHOUT HEATSINK for KINGSTON SFYR2S/1T0 and INSSD1TM2280G5EDGE2X:2800000 IOPS
Controller type
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:Maxio MAP1602
- 1TB EDGE 2 GEN5 M.2 2280 NVME SOLID STATE DRIVE WITHOUT HEATSINK for KINGSTON SFYR2S/1T0 and INSSD1TM2280G5EDGE2X:Phison E28
TBW rating
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:1200
- 1TB EDGE 2 GEN5 M.2 2280 NVME SOLID STATE DRIVE WITHOUT HEATSINK for KINGSTON SFYR2S/1T0 and INSSD1TM2280G5EDGE2X:1000

Side by side

Differences highlightedShow differences only

Comparison of MZ-V9P1T0BW-IN, SFYR2S/1T0-IN
32 specifications	A Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G Model MZ-V9P1T0BW-IN View product	B Integral 1TB EDGE 2 GEN5 M.2 2280 NVME SOLID STATE DRIVE WITHOUT HEATSINK for KINGSTON SFYR2S/1T0 and INSSD1TM2280G5EDGE2X Model SFYR2S/1T0-IN View product
Features8 differ
InterfaceDiffers	PCI Express 4.0	PCI Express 5.0
Component forDiffers	PC/Notebook/Game console	PC/Laptop
Read speedDiffers	7400 MB/s	15000 MB/s
Write speedDiffers	6300 MB/s	13500 MB/s
Random read (4KB)Differs	670000 IOPS	1300000 IOPS
Random write (4KB)Differs	980000 IOPS	2800000 IOPS
Controller typeDiffers	Maxio MAP1602	Phison E28
TRIM supportKnown for one	Unknown — not stated by the source	Yes
Mean time between failures (MTBF)Known for one	Unknown — not stated by the source	1500000 h
TBW ratingDiffers	1200	1000
Protection featuresKnown for one	Shock resistant	Unknown — not stated by the source
Power3 differ
Operating voltageDiffers	3.3 V	3.47 V
Power consumption (read)Differs	5 W	6.1 W
Power consumption (write)Differs	5 W	6.1 W
Weight & dimensions2 differ
DepthDiffers	2.8 mm	38 mm
WeightDiffers	9 g	10 g
Packaging data4 differ
Package widthDiffers	97 mm	105 mm
Package depthDiffers	16.5 mm	25 mm
Package heightDiffers	123 mm	160 mm
Package weightDiffers	15 g	29 g
Operational conditions1 differ
Operating relative humidity (H-H)Differs	5 - 95%	0 - 93%
Other features1 differ
Compliance certificatesDiffers	RoHS, REACH	RoHS

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

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