Product comparison · 2 internal solid state drives

Integral 512 GB m2 Series M.2 2280 PCIe NVMe SSD for BIOSTAR M720-512GB and INSSD512GM280NM2 vs Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G

29specifications compared
19differ
10identical
4known for one product only

Key differences

The Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G has 3,950 MB/s more read speed than the Integral 512 GB m2 Series M.2 2280 PCIe NVMe SSD for BIOSTAR M720-512GB and INSSD512GM280NM2 (7400 MB/s vs 3450 MB/s). The Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G has 3,900 MB/s more write speed than the Integral 512 GB m2 Series M.2 2280 PCIe NVMe SSD for BIOSTAR M720-512GB and INSSD512GM280NM2 (6300 MB/s vs 2400 MB/s). The Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G has 482,000 IOPS more random read (4KB) than the Integral 512 GB m2 Series M.2 2280 PCIe NVMe SSD for BIOSTAR M720-512GB and INSSD512GM280NM2 (670000 IOPS vs 188000 IOPS). SSD capacity: 512 GB on the Integral 512 GB m2 Series M.2 2280 PCIe NVMe SSD for BIOSTAR M720-512GB and INSSD512GM280NM2, 1 TB on the Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G. Interface: PCI Express 3.1 on the Integral 512 GB m2 Series M.2 2280 PCIe NVMe SSD for BIOSTAR M720-512GB and INSSD512GM280NM2, PCI Express 4.0 on the Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G.

SSD capacity
- 512 GB m2 Series M.2 2280 PCIe NVMe SSD for BIOSTAR M720-512GB and INSSD512GM280NM2:512 GB
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:1 TB
Interface
- 512 GB m2 Series M.2 2280 PCIe NVMe SSD for BIOSTAR M720-512GB and INSSD512GM280NM2:PCI Express 3.1
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:PCI Express 4.0
Component for
- 512 GB m2 Series M.2 2280 PCIe NVMe SSD for BIOSTAR M720-512GB and INSSD512GM280NM2:PC/Laptop
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:PC/Notebook/Game console
Read speed
- 512 GB m2 Series M.2 2280 PCIe NVMe SSD for BIOSTAR M720-512GB and INSSD512GM280NM2:3450 MB/s
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:7400 MB/s
Write speed
- 512 GB m2 Series M.2 2280 PCIe NVMe SSD for BIOSTAR M720-512GB and INSSD512GM280NM2:2400 MB/s
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:6300 MB/s
Random read (4KB)
- 512 GB m2 Series M.2 2280 PCIe NVMe SSD for BIOSTAR M720-512GB and INSSD512GM280NM2:188000 IOPS
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:670000 IOPS
Random write (4KB)
- 512 GB m2 Series M.2 2280 PCIe NVMe SSD for BIOSTAR M720-512GB and INSSD512GM280NM2:156000 IOPS
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:980000 IOPS
TBW rating
- 512 GB m2 Series M.2 2280 PCIe NVMe SSD for BIOSTAR M720-512GB and INSSD512GM280NM2:256
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:1200

Side by side

Differences highlightedShow differences only

Comparison of M720-512GB-IN, MZ-V9P1T0BW-IN
33 specifications	A Integral 512 GB m2 Series M.2 2280 PCIe NVMe SSD for BIOSTAR M720-512GB and INSSD512GM280NM2 Model M720-512GB-IN View product	B Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G Model MZ-V9P1T0BW-IN View product
Features9 differ
SSD capacityDiffers	512 GB	1 TB
SSD form factor	M.2	M.2
InterfaceDiffers	PCI Express 3.1	PCI Express 4.0
NVMe	Yes	Yes
Memory typeKnown for one	3D TLC	Unknown — not stated by the source
Component forDiffers	PC/Laptop	PC/Notebook/Game console
Hardware encryption	No	No
Read speedDiffers	3450 MB/s	7400 MB/s
Write speedDiffers	2400 MB/s	6300 MB/s
Random read (4KB)Differs	188000 IOPS	670000 IOPS
Random write (4KB)Differs	156000 IOPS	980000 IOPS
S.M.A.R.T. support	Yes	Yes
TRIM supportKnown for one	Yes	Unknown — not stated by the source
Mean time between failures (MTBF)Known for one	1500000 h	Unknown — not stated by the source
Protection features	Shock resistant	Shock resistant
TBW ratingDiffers	256	1200
CertificationDiffers	CE, FCC, UKCA	CE, UKCA, FCC
Controller typeKnown for one	Unknown — not stated by the source	Maxio MAP1602
Power2 differ
Operating voltage	3.3 V	3.3 V
Power consumption (read)Differs	3.45 W	5 W
Power consumption (write)Differs	2.4 W	5 W
Weight & dimensions3 differ
Width	22 mm	22 mm
DepthDiffers	80 mm	2.8 mm
HeightDiffers	2.25 mm	80 mm
WeightDiffers	10 g	9 g
Packaging data4 differ
Package widthDiffers	13.2 mm	97 mm
Package depthDiffers	5.7 mm	16.5 mm
Package heightDiffers	11.5 mm	123 mm
Package weightDiffers	58 g	15 g
Operational conditionsidentical
Operating temperature (T-T)	0 - 70 °C	0 - 70 °C
Storage temperature (T-T)	-40 - 85 °C	-40 - 85 °C
Operating relative humidity (H-H)	5 - 95%	5 - 95%
Other features1 differ
Compliance certificatesDiffers	RoHS	RoHS, REACH

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

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