Product comparison · 2 internal solid state drives

HP 2UL81AA internal solid state drive vs Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0GW and K01TBM2SP0-25G

19specifications compared
15differ
4identical
14known for one product only

Key differences

The Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0GW and K01TBM2SP0-25G has 6,830 MB/s more read speed than the HP 2UL81AA internal solid state drive (7400 MB/s vs 570 MB/s). The Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0GW and K01TBM2SP0-25G has 5,775 MB/s more write speed than the HP 2UL81AA internal solid state drive (6300 MB/s vs 525 MB/s). The Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0GW and K01TBM2SP0-25G has 669,905 IOPS more random read (4KB) than the HP 2UL81AA internal solid state drive (670000 IOPS vs 95 IOPS). Only the Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0GW and K01TBM2SP0-25G has NVMe. SSD form factor: 2.5" on the HP 2UL81AA internal solid state drive, M.2 on the Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0GW and K01TBM2SP0-25G.

SSD form factor
- 2UL81AA internal solid state drive:2.5"
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0GW and K01TBM2SP0-25G:M.2
Interface
- 2UL81AA internal solid state drive:Serial ATA III
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0GW and K01TBM2SP0-25G:PCI Express 4.0
NVMe
- 2UL81AA internal solid state drive:No
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0GW and K01TBM2SP0-25G:Yes
Component for
- 2UL81AA internal solid state drive:Notebook/All-In-One
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0GW and K01TBM2SP0-25G:PC/Notebook/Game console
Read speed
- 2UL81AA internal solid state drive:570 MB/s
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0GW and K01TBM2SP0-25G:7400 MB/s
Write speed
- 2UL81AA internal solid state drive:525 MB/s
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0GW and K01TBM2SP0-25G:6300 MB/s
Random read (4KB)
- 2UL81AA internal solid state drive:95 IOPS
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0GW and K01TBM2SP0-25G:670000 IOPS
Random write (4KB)
- 2UL81AA internal solid state drive:105 IOPS
- 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0GW and K01TBM2SP0-25G:980000 IOPS

Side by side

Differences highlightedShow differences only

Comparison of 2UL81AA, MZ-V9P1T0GW-IN
33 specifications	A HP 2UL81AA internal solid state drive Model 2UL81AA View product	B Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0GW and K01TBM2SP0-25G Model MZ-V9P1T0GW-IN View product
Features10 differ
SSD form factorDiffers	2.5"	M.2
InterfaceDiffers	Serial ATA III	PCI Express 4.0
NVMeDiffers	No	Yes
Component forDiffers	Notebook/All-In-One	PC/Notebook/Game console
Read speedDiffers	570 MB/s	7400 MB/s
Write speedDiffers	525 MB/s	6300 MB/s
Random read (4KB)Differs	95 IOPS	670000 IOPS
Random write (4KB)Differs	105 IOPS	980000 IOPS
Controller typeKnown for one	Unknown — not stated by the source	Maxio MAP1602
S.M.A.R.T. supportKnown for one	Unknown — not stated by the source	Yes
Protection featuresKnown for one	Unknown — not stated by the source	Shock resistant
TBW ratingDiffers	500	1200
CertificationDiffers	CE, CB, FCC, cTUVus, KCC, BSMI, VCCI, RoHS, RCM	CE, UKCA, FCC
DevSlp (device sleep) supportKnown for one	Yes	Unknown — not stated by the source
Mean time between failures (MTBF)Known for one	2000000 h	Unknown — not stated by the source
Power1 differ
Operating voltageDiffers	3.7 V	3.3 V
Power consumption (read)Known for one	Unknown — not stated by the source	5 W
Power consumption (write)Known for one	Unknown — not stated by the source	5 W
Weight & dimensions4 differ
WidthDiffers	698 mm	22 mm
DepthDiffers	67 mm	2.8 mm
HeightDiffers	100 mm	80 mm
WeightDiffers	50 g	9 g
Packaging dataidentical
Package widthKnown for one	Unknown — not stated by the source	97 mm
Package depthKnown for one	Unknown — not stated by the source	16.5 mm
Package heightKnown for one	Unknown — not stated by the source	123 mm
Package weightKnown for one	Unknown — not stated by the source	15 g
Operational conditionsidentical
Operating relative humidity (H-H)Known for one	Unknown — not stated by the source	5 - 95%
Vibration resistanceKnown for one	3.1 G	Unknown — not stated by the source
Other featuresidentical
Compliance certificatesKnown for one	Unknown — not stated by the source	RoHS, REACH

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

More internal solid state drive comparisons

All internal solid state drive comparisons