Samsung · Internal Solid State Drive

Samsung MZ-V9S4T0 4 TB M.2 PCI Express 4.0 NVMe V-NAND TLC price in Austria

Model MZ-V9S4T0MPN MZ-V9S4T0BWEAN 887276843698EAN 8806095575667

Storage4 TB
ConnectivityPCI Express 4.0
Weight9 g
Operating voltage3.3 V

Lowest price incl. delivery

€ 679,00

at getgoodsFree deliveryIn stock

1 store
1 in stock
1 with free delivery
Checked 5 Oct 2026, 18:25 UTC

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Full specifications and side-by-side comparison

Prices in Austria

1 store · prices in EUR · updated 5 Oct 2026, 18:25 UTC

Lowest price€ 679,00at getgoods · free shippingGo to getgoods

Price range across 1 offer

Every store asks the same price.

1 of 1 stores in stock
1 with free shipping
Checked 5 Oct 2026, 18:25 UTC

getgoodsLowest priceSamsung 990 EVO Plus 4 TB Interne M.2 PCIe NVMe SSD 2280 M.2 NVMe PCIe 4.0 x4, M.2 NVMe PCIe 5.0 x2 In stockFree shipping
€ 679,00incl. free shipping
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Price history in Austria

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Product details

Identification

Brand: Samsung
Product: MZ-V9S4T0 4 TB M.2 PCI Express 4.0 NVMe V-NAND TLC
Full name: Samsung MZ-V9S4T0 4 TB M.2 PCI Express 4.0 NVMe V-NAND TLC
Manufacturer part number: MZ-V9S4T0BW
EAN / UPC: 887276843698, 8806095575667
Category: Internal Solid State Drive

33 specifications from the manufacturer's data sheet

Features

SSD capacity	4 TB
SSD form factor	M.2
Interface	PCI Express 4.0
NVMe	Yes
NVMe version	2.0
Memory type	V-NAND TLC
Component for	PC
Hardware encryption	Yes
Security algorithms	256-bit AES
M.2 SSD size	2280 (22 x 80 mm)
Read speed	7250 MB/s
Write speed	6300 MB/s
Random read (4KB)	1050000 IOPS
Random write (4KB)	1400000 IOPS
DevSlp (device sleep) support	Yes
S.M.A.R.T. support	Yes
TRIM support	Yes
Mean time between failures (MTBF)	1500000 h

Power

Operating voltage	3.3 V
Power consumption (read)	5.5 W
Power consumption (write)	4.8 W
Power consumption (idle)	0.06 W
Power consumption DevSlp (device sleep)	5 mW